12 Ago 1PCS MRF6S9130H RF Power Field Effect Transistors 880 MHz 28 V 27W new original
Part No. : MRF6S9130HR3 MRF6S9130H Description : RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 880MHz ， 27W , 28V Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications....