NXP MRF300AN RF Power LDMOS Transistors 1.8 to 250 MHz 50 VDC 300 W New Original - JIMFRA
343256
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NXP MRF300AN RF Power LDMOS Transistors 1.8 to 250 MHz 50 VDC 300 W New Original

NXP MRF300AN RF Power LDMOS Transistors 1.8 to 250 MHz 50 VDC 300 W New Original

USD 69.99 USD
SKU: nIiL2QI1
Brand: NXP
MPN: MRF300AN
Condition: New

Specifications

Collector-Emitter Voltage-50 V, 50 V
Maximum Collector-Base Voltage-300 V
Maximum Base-Emitter Voltage-3 V
MPNMRF300AN
Transistor CategoryPower Transistor
Minimum Operating Temperature-40 °C (-40 °F)
BrandNXP
Maximum Base-Emitter Saturation Voltage-1.8 V
Maximum Collector-Emitter Saturation Voltage1.0 V
Maximum Power Dissipation300 W
Maximum Operating Frequency250 MHz
Maximum Operating Temperature105 °C (221 °F)
Country Of OriginUnited States

Series: MRF300AN. Manufacturer: NXP. Product Category: RF MOSFET Transistors. Product Type: RF MOSFET Transistors. Id - Continuous Drain Current: 30 A. Forward Transconductance - Min: 28 S. Output Power: 330 W.

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