20pack IRF3205 IR MOSFET N-CHANNEL 55V/110A TO-220 Power Transistor IRF NEW
Specifications
| Return Shipping Will Be Paid By | Seller |
| All Returns Accepted | Returns Accepted |
| Item Must Be Returned Within | 30 Days |
| Refund Will Be Given As | Money Back |
| Function | Power Transistor |
| Transistor Type | MOSFET |
| Model | IRF3205 |
| Type Of Control Channel | N -Channel |
| Rise Time (tr) | 101 nS |
| Feature | Ultra Low On-Resistance |
| QTY | 20PCS |
| Brand | Unbranded |
| MPN | IRF3205 |
| Maximum Operating Temperature | 175 °C (347 °F) |
| Mounting Style | Through-Hole |
| Transistor Category | Power Transistor |
| Maximum Base-Emitter Voltage | 55V |
| Maximum DC Collector Current | 110A |
| Maximum Power Dissipation | 200W |
| Packaging | Tube (管) |
| Series | IRF3205 |
Description: Advanced Process TechnologyUltra Low On-ResistanceDynamic dv/dt Rating175°C Operating TemperatureFast SwitchingFully Avalanche Rated Specification:Type of Transistor: MOSFETType of Control Channel: N -ChannelMaximum Power Dissipation (Pd): 200 WMaximum Drain-Source Voltage 'Vds': 55 VMaximum Gate-Source Voltage 'Vgs': 20 VMaximum Gate-Threshold Voltage 'Vgs(th)': 4 VMaximum Drain Current 'Id': 110 AMaximum Junction Temperature (Tj): 175 °CTotal Gate Charge (Qg): 146(max) nCRise Time (tr): 101 nSDrain-Source Capacitance (Cd): 781 pFMaximum Drain-Source On-State Resistance (Rds): 0.008 Ohm Package Included:20 x IRF3205 IR MOSFET N-CHANNEL HEXFET Power TransistorOn Jul 18, 2024 at 14:26:04 PDT, seller added the following information: